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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD791/D NPN Plastic Silicon Power Transistor . . . designed for low power audio amplifier and low-current, high speed switching applications. * High Collector-Emitter Sustaining Voltage -- VCEO(sus) = 100 Vdc (Min) * High DC Current Gain @ IC = 200 mAdc hFE = 40-250 * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdc * High Current Gain -- Bandwidth Product -- fT = 40 MHz (Min) @ IC = 100 mAdc) BD791 Motorola Preferred Device 4 AMPERE POWER TRANSISTOR SILICON 100 VOLTS 15 WATTS TC PD, POWER DISSIPATION (WATTS) III II IIIIIIIIIIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIII IIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I I I II IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I I II II I I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII *MAXIMUM RATINGS Rating Symbol VCEO VCB Max 100 100 6.0 4.0 8.0 1.0 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage VEBO IC IB Collector Current -- Continuous -- Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 15 0.12 Watts W/_C TJ,Tstg - 65 to + 150 CASE 77-09 TO-225AA TYPE _C THERMAL CHARACTERISTICS Characteristic Symbol RJC Max Unit Thermal Resistance, Junction to Case 16 8.34 _C/W 1.6 TA PD, POWER DISSIPATION (WATTS) 12 1.2 8.0 0.8 4.0 0.4 0 20 40 60 80 100 120 T, TEMPERATURE (C) 140 0 160 Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. (c) Motorola, Inc. 1998 Motorola Bipolar Power Transistor Device Data 1 BD791 t, TIME (ns) II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Sustaining Voltage (1) (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCE = 50 Vdc, IB = 0) VCEO(sus) ICEO ICEX Vdc 100 -- -- -- -- -- Adc 100 1.0 0.1 1.0 Collector Cutoff Current (VCE = 100 Vdc, VBE(off) = 1.5 Vdc) (VCE = 50 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) Adc mAdc Adc IEBO ON CHARACTERISTICS (1) DC Current Gain (IC = 200 mAdc, VCE = 3 0 Vdc) (IC = 1.0 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc) hFE -- 40 20 10 5.0 250 -- -- -- Collector Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) (IC = 2.0 Adc, IB = 200 mAdc) (IC = 4.0 Adc, IB = 800 mAdc) VCE(sat) Vdc -- -- -- -- -- -- 0.5 1.0 2.5 3.0 1.8 1.5 Base-Emitter Saturation Voltage (IC = 2.0 Adc, IB = 200 mAdc) Base-Emitter On Voltage (IC = 200 mAdc, VCE = 3.0 Vdc) VBE(sat) VBE(on) Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 100 mAdc, VCE = 10 Vdc, f = 10 MHz) Output Capacitance (VCB = 10 Vdc, IC = 0, f = 0.1 MHz) fT 40 -- MHz pF -- Cob hfe -- 50 -- Small-Signal Current Gain (IC = 200 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 10 * Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width 300 s, Duty Cycle v v 2.0%. 25 s + 11 V 0 - 9.0 V tr, tf 10 ns DUTY CYCLE = 1.0% RB + 30 V VCC RC SCOPE 500 300 200 100 70 50 30 20 10 7.0 5.0 0.04 tr td @ VBE(off) = 5.0 V TJ = 25C VCC = 30 V IC/IB = 10 v 51 -4V D1 RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg MBR340 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES. [ [ 0.06 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 Figure 2. Switching Time Test Circuit Figure 3. Turn-On Time 2 Motorola Bipolar Power Transistor Device Data BD791 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.02 D = 0.5 0.2 0.1 0.05 P(pk) RJC(t) = r(t) RJC RJC = 8.34C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 20 50 100 200 0.02 0.01 0 (SINGLE PULSE) 0.05 0.1 0.2 0.5 1.0 2.0 t, TIME (ms) t1 t2 DUTY CYCLE, D = t1/t2 5.0 10 Figure 4. Thermal Response 10 5.0 IC, COLLECTOR CURRENT (AMP) 2.0 1.0 0.5 TJ = 150C 5.0 ms BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO dc 100 s 1.0 ms 500 s 0.1 0.05 0.02 0.01 1.0 2.0 3.0 5.0 7.0 10 50 70 100 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C: TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C, TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v Figure 5. Active Region Safe Operating Area 2000 1000 700 500 t, TIME (ns) 300 200 100 70 50 30 20 0.04 0.06 ts TJ = 25C VCC = 30 V IC/IB = 10 IB1 = IB2 200 TJ = 25C C, CAPACITANCE (pF) 100 70 50 Cib tf 30 20 Cob 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 10 1.0 2.0 3.0 5.0 7.0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 50 70 100 Figure 6. Turn-Off Time Figure 7. Capacitance Motorola Bipolar Power Transistor Device Data 3 BD791 500 300 200 hFE , DC CURRENT GAIN 100 70 50 30 20 0.2 7.0 5.0 0.04 0.06 VCE(sat) 0.2 0.4 0.6 1.0 2.0 4.0 25C - 55C TJ = 150C VCE = 1.0 V VCE = 3.0 V V, VOLTAGE (VOLTS) 1.4 TJ = 25C 1.2 1.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 3.0 V IC/IB = 10 5.0 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 0 0.04 0.06 0.1 IC, COLLECTOR CURRENT (AMP) Figure 8. DC Current Gain Figure 9. "On" Voltage V, TEMPERATURE COEFFICIENTS (mV/C) + 2.5 + 2.0 + 1.5 + 1.0 + 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 VB FOR VBE 0.1 0.2 *VC FOR VCE(sat) 25C to 150C - 55C to 25C 25C to 150C - 55C to 25C 0.4 0.6 1.0 2.0 4.0 *APPLIES FOR IC/IB hFE/3 - 2.5 0.04 0.06 IC, COLLECTOR CURRENT (AMP) Figure 10. Temperature Coefficient 4 Motorola Bipolar Power Transistor Device Data BD791 PACKAGE DIMENSIONS -B- U Q F M C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- -A- 123 H K V G S D 2 PL 0.25 (0.010) M J R 0.25 (0.010) A M A M M B M B M STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77-09 TO-225AA TYPE ISSUE W Motorola Bipolar Power Transistor Device Data 5 BD791 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.; SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan. 81-3-5487-8488 6 Motorola Bipolar Power Transistor Device Data BD791/D |
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